PAPER

論文発表実績

2018

  1. T. Murai, T. Makino, H. Kato, M. Shimizu, D. E. Herbschleb, Y. Doi, H. Morishita, M. Fujiwara, M. Hatano, S. Yamasaki, N. Mizuochi, "Engineering of Fermi level by nin diamond junction for control of charge states of NV centers" Applied Physics Letters, 112, 111903 (2018)
  2. M.Shimizu, T.Makino, T. Iwasaki, K.Tahara, H. Kato, N.Mizuochi, S.Yamasaki, M.Hatano “Charge-state control of ensemble of nitrogen vacancy centers by n–i–n diamond junctions” Applied Physics Express 11 033004 (2018)

2017

  1. D. Kikuchi, D. Prananto, K. Hayashi, A. Laraoui, N. Mizuochi, M. Hatano, E. Saitoh, Y. Kim, C. A. Meriles, T. An, "Long-distance excitation of nitrogen-vacancy centers in diamond via surface spin waves" Applied Physics Express, 10, 103004 (2017)
  2. J. Yaita, T. Tsuji, M. Hatano, T. Iwasaki,“Preferentially-aligned nitrogen-vacancy centers in heteroepitaxial (111) diamonds on si substrates via 3C-SiC intermediate layers” Appl. Phys. Express.11 045501 (2018) doi.org/10.7567/APEX.11.045501
  3. T. Iwasaki, Y. Miyamoto, T. Taniguchi, P. Siyushev, M. H. Metsch, F. Jelezko, M. Hatano, “Tin-Vacancy Quantum Emitters in Diamond”  Phys. Rev. Lett. 119, 253601, 2017. doi:10.1103/PhysRevLett.119.253601
  4. J. Yaita, M. Natal, S. E. Saddow, M. Hatano, T. Iwasaki, “In-situ bias current monitoring of nucleation for epitaxial diamonds on 3C-SiC/Si substrates” Submitted to Diamond Relat. Mater.
  5. Hitoshi Ishiwata, Makoto Nakajima, Kosuke Tahara, Hayato Ozawa, Takayuki Iwasaki, Mutsuko Hatano "Perfectly Aligned Shallow Ensemble Nitrogen-Vacancy Centers in (111) Diamond" Appl. Phys. Lett. 111, 043103-1〜5 2017. doi:10.1063/1.4993160
  6. S. Haeussler, G. Thiering, A. Dietrich, T. Teraji, J. Isoya, T. Iwasaki, M. Hatano, F. Jelezko, A. Gali, A. Kubanek, “Photoluminescence excitation spectroscopy of SiV- and GeV- color center in diamond”” New J. Phys. 19, 063036, 2017. doi:10.1088/1367-2630/aa73e5
  7. Takayuki Iwasaki, Taisuke Suwa, Junya Yaita, Hiromitsu Kato, Toshiharu Makino,Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, and Mutsuko Hatano, “Observation of Interface Defects in Diamond Lateral p-n-Junction Diodes and Their Effect on Reverse Leakage Current” IEEE Trans. Electron Dev., 64, 8, 3298-3302, 2017. doi:10.1109/TED.2017.2718508
  8. H. Ozawa, K. Tahara, H. Ishiwata, M. Hatano, T. Iwasaki, “Formation of perfectly aligned nitrogen-vacancy center ensembles in chemical-vapor-deposition-grown diamond (111)” Appl. Phys. Express. 10, 045501, 2017. doi:10.7567/APEX.10.045501
  9. J. Yaita, M. Natal, S. E. Saddow, M. Hatano, T. Iwasaki, “Influence of High-Power-Density Plasma on Heteroepitaxial Diamond Nucleation on 3C-SiC Surface” Appl. Phys. Express. 10, 045502, 2017. doi:10.7567/APEX.10.045502
  10. T. Iwasaki, W. Naruki, K. Tahara, T. Makino, H. Kato, M. Ogura, D. Takeuchi, S. Yamasaki, M. Hatano, “Direct Nanoscale Sensing of Internal Electric-Field in Operating Semiconductor Devices Using Single Electron Spins” ACS Nano, 11, 1238-1245, 2017. doi:10.1021/acsnano.6b04460
  11. T. Suto, J. Yaita, T. Iwasaki, M. Hatano, “Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate” Appl. Phys. Lett., 110, 062102, 2017. doi:10.1063/1.4975630
  12. T. Iwasaki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Hatano, “High Temperature Bipolar-Mode Operation of Normally-Off Diamond JFETs” J. Electron. Device. Soc., 5, 95-99, 2017. doi:10.1109/JEDS.2016.2624301
  13. J. Hasegawa, L. Pace, L. V. Phung, M. Hatano, D. Planson, “Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation” IEEE Trans. Electron Dev., 64, 3, 1203-1208, 2017. doi:10.1109/TED.2017.2657223

2016

  1. M. Shimizu, T. Makino, T. Iwasaki, J. Hasegawa, K. Tahara, W. Naruki, H. Kato, S. Yamasaki, and M. Hatano, "Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p-i-n junction”, Diamond and Related Materials, 63 (2016.3) 192-196. doi:10.1016/j.diamond.2015.10.022

2015

  1. T. Suwa, T. Iwasaki, K. Sato, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, and M. Hatano, "Normally-Off Diamond Junction Field-Effect Transistors with Submicron Channel", IEEE Electron Device Letters, 37.2 (2015.12) 209-211. doi:10.1109/LED.2015.2513074
  2. K. Tahara, H. Ozawa, T. Iwasaki, N. Mizuochi, and M. Hatano, "Quantifying selective alignment of ensemble nitrogen-vacancy centers in (111) diamond", Applied Physics Letters, 107 (2015.11) 193110. doi:10.1063/1.4935709
  3. S. Furuyama, K. Tahara, T. Iwasaki, M. Shimizu, J. Yaita, M. Kondo, T. Kodera, and M. Hatano, "Improvement of fluorescence intensity of nitrogen vacancy centers in self-formed diamond microstructures", Applied Physics Letters, 107.16 (2015.10) 163012. doi:10.1063/1.4933103
  4. T. Iwasaki, F. Ishibashi, Y. Miyamoto, Y. Doi, S. Kobayashi, T. Miyazaki, K. Tahara, K. Jahnke, L. Rogers, B. Naydenov, F. Jelezko, S. Yamasaki, S. Nagamachi, T. Inubushi, N. Mizuochi, and M. Hatano, "Germanium-Vacancy Single Color Centers in Diamond", Scientific Reports, 5 (2015.8) 12882. doi:10.1038/srep12882
  5. K. Sato, T. Iwasaki, M. Shimizu, H. Kato, T. Makno, M. Ogura, D. Takeuchi, S. Yamasaki, and M. Hatano, "Fabrication of diamond lateral p–n junction diodes on (111) substrates" Physica Status Solidi A, 212.11 (2015.7) 2548-2552. doi:10.1002/pssa.201532266
  6. J. T. Song, T. Iwasaki, and M. Hatano, "Photoelectrochemical CO2 reduction on 3C-SiC photoanode in aqueous solution" Japanese Journal of Applied Physics, 54.4S (2015.3) 04DR05. doi:10.7567/JJAP.54.04DR05
  7. J. Yaita, T. Iwasaki, M. Natal, S. E. Saddow, and M. Hatano, "Heteroepitaxial Growth of Diamond Films on 3C-SiC/Si Substrates with Utilization of Antenna-Edge Microwave Plasma CVD for Nucleation", Jananese Journal of Applied Physics, 54.4S (2015.3) 04DH13. doi:10.7567/JJAP.54.04DH13
  8. T. Kawamura, H. Uchiyama, S. Saito, H. Wakana, T. Mine, and M. Hatano, "Analysis of subthreshold slope of fully depleted amorphous In-Ga-Zn-O thin-film transistors", Applied Physics Letters, 106 (2015.1) 013504. doi:10.1063/1.4905469
  9. J. Hasegawa, M. Noguchi, M. Furuhashi, S. Nakata, T. Iwasaki, T. Kodera, T. Nishimura, and M. Hatano, "Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy", Japanese Journal of Applied Physics, 54.4S (2015.1) 04DP05. doi:10.7567/JJAP.54.04DP05

2014

  1. T. Miyazaki, Y. Miyamoto, T. Makino, H. Kato, S. Yamasaki, T. Fukui, Y. Doi, N.Tokuda, M. Hatano, and N. Mizuochi, "Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond", Applied Physics Letters, 105 (2014.12) 261601. doi:10.1063/1.4904988
  2. S. Furuyama, K. Tahara, A. Matsutani, T. Iwasaki, and M. Hatano, "Fluorinated graphene FETs controlled by Ionic Liquid Gate", Journal of Display Technology, 10.11 (2014.6) 962-965. doi:10.1109/JDT.2014.2332636
  3. K. Sato, T. Iwasaki, H. Kato, T. Makino, M. Ogura, S. Yamasaki, S. Nakamura, K. Ichikawa, A. Sawabe, and M. Hatano, "Analysis of Selective Growth of n-Type Diamond in Lateral pn Junction Diode", Japanese Journal of Applied Physics, 53.5S1 (2014.4) 05FP01. doi:10.7567/JJAP.53.05FP01.
  4. J. T. Song, T. Iwasaki, and M. Hatano, "Pt co-catalyst effect on photoelectrochemical properties of 3C-SiC photo-anode", Japanese Journal of Applied Physics, 53.5S1 (2014.3) 05FZ04. doi:10.7567/JJAP.53.05FZ04
  5. T. Iwasaki, A. A. Zakharov, T. Eelbo, M. Wasniowska, R. Wiesendanger, J. H. Smet, and U. Starke, "Formation and structural analysis of twisted Bilayer graphene on Ni(111) thin Film", Surface Science, 625 (2014.3) 44-49. doi:10.1016/j.susc.2014.03.004
  6. J. Hasegawa, K. Konishi, Y. Nakamura, K. Otsuka, S. Nakata, Y. Nakamine, T. Nishimura, and M. Hatano, "Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation", Materials Science Forum, 778-780 (2014.2) 828-831. doi:10.4028/www.scientific.net/MSF.778-780.828

2013

  1. T. Iwasaki, J. Yaita, H. Kato, T. Makino, M. Ogura, D. Takeuchi, H. Okushi, S. Yamasaki, and M. Hatano, "600 V Diamond Junction Field-Effect Transistors Operated at 200 °C", IEEE Electron Device Letters, 35.2 (2013.12) 241-243. doi:10.1109/LED.2013.2294969
  2. J. T. Song, H. Mashiko, M. Kamiya, Y. Nakamine, A. Ohtomo, T. Iwasaki, and M. Hatano, "Improved visible light driven photoelectrochemical properties of 3C-SiC semicond with Pt nanoparticles for hydrogen generation", Applied Physics Letters, 103.21 (2013.11) 213901. doi:10.1063/1.4832333
  3. K. Tahara, T. Iwasaki, S. Furuyama, A. Matsutani, and M. Hatano, "Asymmetric transport property of fluorinated graphene", Applied Physics Letters. 103.14 (2013.10) 143106. doi:10.1063/1.4823798
  4. T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, H. Okushi, S. Yamasaki, and M. Hatano, "High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions", IEEE Electron Device Letters, 34.9 (2013.7) 1175-1177. doi:10.1109/LED.2013.2271377
  5. A. Matsutani, K. Tahara, T. Iwasaki, and M. Hatano, "Fluorination of Graphene by Reactive Ion Etching System Using Ar/F2 Plasma", Japanese Journal of Applied Physics. 52.6S (2013.6) 06GD11. doi:10.7567/JJAP.52.06GD11

2012

  1. K. Tahara, T. Iwasaki, A. Matsutani, and M. Hatano, "Effect of radical fluorination on mono- and bi-layer graphene in Ar/F2 plasma", Applied Physics Letters. 101.16 (2012.10) 163105. doi:10.1063/1.4760268
  2. Y. Hoshino, H. Kato, T. Makino, M. Ogura, T. Iwasaki, M. Hatano, and S Yamasaki, "Electrical properties of lateral p-n junction diodes fabricated by selective growth of n+ diamond", Physica Status Solidi (A), 209.9 (2012.8) 1761-1764. doi:10.1002/pssa.201200053
  3. T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, T. Matsumoto, H. Okushi, S. Yamasaki, and M. Hatano, "Diamond Junction Field-Effect Transistors with Selectively Grown n+-Side Gates", Applied Physics Express, 5.9 (2012.8) 091301. doi:10.1143/APEX.5.091301

国際会議プロシーディング

  1. T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, T. Matsumoto, H. Okushi, S. Yamasaki, and, M. Hatano, (2012.12), "Diamond Semiconductor JFETs by Selectively Grown n+-Diamond Side Gates for Next Generation Power Devices", Proceeding of IEEE International Electron Devices Meeting (IEDM2012), San Francisco, U.S.A. (2012.12) 7.5.1-7.5.4. doi:10.1109/IEDM.2012.6478999