ポスター発表

国際発表

2018年

  1. K.Mizuno, M.Nakajima, H.Ishiwata, Y. Masuyama, T.Iwasaki, and M.Hatano "Wide field diamond magnetometry with millihertz frequency resolution and nanotesla sensitivity", 29th International Conference on Diamond and Carbon Material, Elsevier Dobrovnik, Croatia, Sep. 2018.
  2. T. Iwasaki , Y. Miyamoto, T. Taniguchi , P. Siyushev , M.H. Metsch , F. Jelezko , M. Hatano “Tin-vacancy color centers in diamond”, Hasselt Diamond Workshop 2018 - SBDD XXIII,( cultuurcentrum Hasselt, Hasselt, Belgium), Mar. 7, 2018.
  3. H. Ozawa , H. Ishiwata , T. Iwasaki, M. Hatano “Thermal stability of perfectly aligned NV centers for high sensitive magnetometers”, Hasselt Diamond Workshop 2018 - SBDD XXIII,( cultuurcentrum Hasselt, Hasselt, Belgium), Mar. 7, 2018.
  4. Y. Masuyama, K. Mizuno , H. Ozawa , Y. Hatano , T. Iwasaki , M. Hatano“ Quantum magnetic sensing of large detection volume of nitrogen-vacancy centers with enhanced microwave irradiation “, Hasselt Diamond Workshop 2018 - SBDD XXIII,( cultuurcentrum Hasselt, Hasselt, Belgium), Mar. 7, 2018.

2015年

  1. M.Hatano “Development of magnetic image sensors based on ensemble nitrogen-vacancy centers in CVD-grown diamond” Diamond Quantum Sensing Workshop 2015, Takamatsu, Japan, Aug. 5, 2015.
  2. H. Ozawa, K. Tahara, T. Iwasaki, M. Hatano,“(111) Diamond Growth for Preferentially Aligned Ensemble NV centers” Diamond Quantum Sensing Workshop 2015, Takamatsu, Japan, Aug. 5, 2015.
  3. T. Suto, J. Yaita, T. Iwasaki, M. Hatano,“Heteroepitaxial Growth of Diamond on 3C-SiC/Si by Antenna-edge Microwave Plasma CVD”Diamond Quantum Sensing Workshop 2015, Takamatsu, Japan, Aug. 5, 2015.
  4. T. Iwasaki, F. Ishibashi, Y. Miyamoto, Y. Doi, S. Kobayashi, T. Miyazaki, K. Tahara, K. D. Jahnke, L. J. Rogers, B. Naydenov, F. Jelezko, S. Yamasaki, S. Nagamachi, T. Inubushi, N. Mizuochi, M. Hatano,“Germanium-Vacancy Single Color Centers in Diamond” Diamond Quantum Sensing Workshop 2015, Takamatsu, Japan, Aug. 5, 2015.
  5. H. Ozawa, K. Tahara, T. Iwasaki, M. Hatano,“(111) Diamond Growth for Preferentially Aligned Ensemble NV centers” Diamond Quantum Sensing Workshop 2015, Takamatsu, Japan, Aug. 5, 2015.
  6. J. Yaita, T. Iwasaki, M. R. Natal, S. E. Saddow, M. Hatano,”Improvement of the nucleation density and orientation of diamond nuclei on 3C-SiC/Si Substrates by using high-power density plasma, 9th International Conference on New Diamond and Nano Carbons 2015, Shizuoka Granship(Shizuoka, Japan) ,May. 26, 2015.
  7. K.Sato, T.Iwasaki, M. Shimizu, H.Kato, T.Makino, M.Ogura, D.Takeuchi, S.Nakamura, A.Sawabe, S.Yamasaki, M. Hatano, “Fabrication of diamond lateral pn Junctions on (111)substrates” Hasselt Diamond Workshop 2015, Cultuurcentrum Hasselt(Hasselt  Belgium),Feb. 25, 2015.
  8. S.Furuyama, T.Iwasaki, M.Shimizu, J. Yaita, T.Kodera, M.Hatano, “Collection efficiency improvement of NV centers by selective growth of diamond” Hasselt Diamond Workshop 2015, Cultuurcentrum Hasselt(Hasselt Belgium) ,Feb. 25, 2015.
  9. K.Sato, T.Iwasaki, M. Shimizu, H.Kato, T.Makino, M.Ogura, D.Takeuchi, S.Nakamura, A.Sawabe, S.Yamasaki, M. Hatano, “Fabrication of diamond lateral pn Junctions on (111)substrates” Hasselt Diamond Workshop 2015, Cultuurcentrum Hasselt(Hasselt  Belgium) ,Feb. 25, 2015.
  10. K.Sato, T.Iwasaki, M. Shimizu, H.Kato, T.Makino, M.Ogura, D.Takeuchi, S.Nakamura, A.Sawabe, S.Yamasaki, M. Hatano, “Fabrication of diamond lateral pn Junctions on (111)substrates” Hasselt Diamond Workshop 2015, Cultuurcentrum Hasselt(Hasselt  Belgium) ,Feb. 25, 2015.

2014年

  1. J. Hasegawa, M.Noguchi, M.Furuhashi, S. Nakata, T.Iwasaki, T.Kodera, T.Nishimura, M.Hatano “Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS” SSDM 2014, Tsukuba International Congress Center, Tsukuba Japan, Sep. 10, 2014.
  2. T. Iwasaki, J. Yaita, M. Natal, S. E. Saddow, M. Hatano,“Heteroepitaxial nucleation of diamond on 3C-SiC(001) thin films by antenna-edge microwave plasma CVD”, Hasselt Diamond Workshop 2014, Cultuurcentrum Hasselt(Hasselt Belgium), Sep. 19, 2014.

2013年

  1. J.Hasegawa, K.Konishi ,Y.Nakamura, K.Otsuka, S.Nakata, Y. Nakamine, T. Nishimura, M. Hatano, “Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation”, ICSCRM2013, Seagaia Convention Center (Miyazaki, Japan), Oct. 2,2013.
  2. K. Sato, T. Iwasaki, Y. Hoshino, H. Kato, T. Makino, M. Ogura, S. Yamasaki, S. Nakamura, K. Ichikawa, A. Sawabe, M. Hatano,“Analysis of Selective Growth of n-Type Diamond in Lateral pn Junction Diodes”2013 JSAP-MRS Joint Symposia, Doushisha Univ, Kyoutanabe Campus (Kyoto,Japan), Sep. 19,2013.
  3. K.Tahara, T.Iwasaki, A.Matsutani, T.Yamaguchi, K.Ishibashi, M.Hatano “Magnetotransport properties of fluorinated graphene” RPGR2013, Tokyo Institute of Technology (Tokyo, Japan), Sep. 12,2013.
  4. J. T. Song, T. Iwasaki, M. Hatano, Photoelectrochemical water splitting using n-type 3C-SiC with visible light response, 2013 MRS Spring Meeting, Moscone West Convention Center (San Francisco, USA), Apr. 3,2013.

2012年

  1. K. Tahara, T. Iwasaki, A. Matsutani, S. Furuyama, Y. Ohno, K. Matsumoto, and, M. Hatano, "Fluorination of Mono- and Bi-layer Graphene by Ar/F2 Plasma", 2012 MRS Fall Meeting, Boston, USA, Nov. 2012.
  2. A.Matsutani, K. Tahara, T. Iwasaki, and, M. Hatano, "Fluorination Process of Graphene using Ar/F2 Plasma", MNC 2012, 25th International Microprocesses and Nanotechnology Conference, Kobe, Japan, Oct. 2012.
  3. J. T. Song, T. Iwasaki and, M. Hatano, "Photoelectrochemical Properties of SiC Semiconductor for Water Splitting (poster)", The Fifth Energy-GCOE Career Development Program Forum (GCOE). Tokyo Institute of Technology, Tokyo, Japan, Sep. 6,2012.


国内発表

2016年

  1. 赤羽 俊之輔, 前田 和彦, 岩崎 孝之,小寺 哲夫,波多野 睦子 「助触媒担持による 4H-SiC 光電極の特性」 第77回応用物理学会秋季学術講演会, 新潟, 2016年9月.
  2. 山岡裕, 小田俊理, 小寺哲夫 「高濃度ドーピングしたシリコンを用いた単一量子ドットの正孔輸送特性」 第63回応用物理学会春季学術講演会, 東京(大岡山), 2016年3月.

2012年

  1. J. T. Song, T. Iwasaki, and M. Hatano, "Photoelectrochemical Properties of SiC Semiconductor for Water Splitting", The Fifth Energy-GCOE Career Development Program Forum (GCOE). Tokyo Institute of Technology, Tokyo, Japan, September 2012.