Silicon Qubit

p-type Double Quantum Dots

Silicon double quantum dots (Si DQDs) have been well studied toward electron spin quantum bits (qubits) which are expected to have long coherence time and suitability for integration. Holes in Si DQDs have potential for qubits based on spin-orbit interactions (SOI) due to its wave function with a p-like orbital. However, strong SOI can be a cause of destroying spin states. It is essential to control the strength of SOI into the appropriate range. In this work we fabricated p-channel Si DQDs and observed typical transport characteristics of DQDs and Pauli spin blockade. We also succeeded in electrical control of the effects of SOI by using a top gate.

Device structure and SEM picture of the device
Fig.1 The position of the SiC power devices