SiC power device

Interface states density measurement and device simulation

The next-generation semiconductor device, SiC MOS-FETs, have an advantage in the view of the energy conversion efficiency and the simplicity of cooling comparing with Si-IGBTs which has been used conventionally widely. Thus, this SiC device being introduced to transportation infrastructure (vehicle, railway) and an inverter in the consumer products (air conditioner, etc.). Recently, in mind the application in the electric power infrastructure, the research and development of SiC-IGBT having higher breakdown voltage than Si-IGBT have been progressed.

In our laboratory, unitizing a DLTS/ICTS method and various surface analysis, we are investigating the quantity and origin of SiO2/SiC interface states (one of the lattice defects) in the SiC-MOSFETs. We also trying to quantitatively clarify the relationship between the interface state density and the device characteristics or reliability by using device simulation. The future reserch project that focused the lifetime which have an influence over SiC-IGBT device characteristics will be start soon.

The position of the SiC power devices
Fig.1 The position of the SiC power devices
The measurement example of the interface state density
Fig.2 Example of the interface state density measurement in our lab