Papers

Peer-reviewed papers

2017

  1. H. Ozawa, K. Tahara, H. Ishiwata, M. Hatano, T. Iwasaki, “Formation of perfectly aligned nitrogen-vacancy center ensembles in chemical-vapor-deposition-grown diamond (111)” Appl. Phys. Express. 10, 045501, 2017. doi:10.7567/APEX.10.045501
  2. J. Yaita, M. Natal, S. E. Saddow, M. Hatano, T. Iwasaki, “Influence of High-Power-Density Plasma on Heteroepitaxial Diamond Nucleation on 3C-SiC Surface” Appl. Phys. Express. 10, 045502, 2017. doi:10.7567/APEX.10.045502
  3. T. Iwasaki, W. Naruki, K. Tahara, T. Makino, H. Kato, M. Ogura, D. Takeuchi, S. Yamasaki, M. Hatano, “Direct Nanoscale Sensing of Internal Electric-Field in Operating Semiconductor Devices Using Single Electron Spins” ACS Nano, 11, 1238-1245, 2017. doi:10.1021/acsnano.6b04460
  4. T. Suto, J. Yaita, T. Iwasaki, M. Hatano, “Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate” Appl. Phys. Lett., 110, 062102, 2017. doi:10.1063/1.4975630
  5. T. Iwasaki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Hatano, “High Temperature Bipolar-Mode Operation of Normally-Off Diamond JFETs” J. Electron. Device. Soc., 5, 95-99, 2017. doi:10.1109/JEDS.2016.2624301
  6. J. Hasegawa, L. Pace, L. V. Phung, M. Hatano, D. Planson, “Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation” IEEE Trans. Electron Dev., 64, 3, 1203-1208, 2017. doi:10.1109/TED.2017.2657223

2016

  1. M. Shimizu, T. Makino, T. Iwasaki, J. Hasegawa, K. Tahara, W. Naruki, H. Kato, S. Yamasaki, and M. Hatano, "Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p-i-n junction”, Diamond and Related Materials, 63 (2016.3) 192-196. doi:10.1016/j.diamond.2015.10.022

2015

  1. T. Suwa, T. Iwasaki, K. Sato, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, and M. Hatano, "Normally-Off Diamond Junction Field-Effect Transistors with Submicron Channel", IEEE Electron Device Letters, 37.2 (2015.12) 209-211. doi:10.1109/LED.2015.2513074
  2. K. Tahara, H. Ozawa, T. Iwasaki, N. Mizuochi, and M. Hatano, "Quantifying selective alignment of ensemble nitrogen-vacancy centers in (111) diamond", Applied Physics Letters, 107 (2015.11) 193110. doi:10.1063/1.4935709
  3. S. Furuyama, K. Tahara, T. Iwasaki, M. Shimizu, J. Yaita, M. Kondo, T. Kodera, and M. Hatano, "Improvement of fluorescence intensity of nitrogen vacancy centers in self-formed diamond microstructures", Applied Physics Letters, 107.16 (2015.10) 163012. doi:10.1063/1.4933103
  4. T. Iwasaki, F. Ishibashi, Y. Miyamoto, Y. Doi, S. Kobayashi, T. Miyazaki, K. Tahara, K. Jahnke, L. Rogers, B. Naydenov, F. Jelezko, S. Yamasaki, S. Nagamachi, T. Inubushi, N. Mizuochi, and M. Hatano, "Germanium-Vacancy Single Color Centers in Diamond", Scientific Reports, 5 (2015.8) 12882. doi:10.1038/srep12882
  5. K. Sato, T. Iwasaki, M. Shimizu, H. Kato, T. Makno, M. Ogura, D. Takeuchi, S. Yamasaki, and M. Hatano, "Fabrication of diamond lateral p–n junction diodes on (111) substrates" Physica Status Solidi A, 212.11 (2015.7) 2548-2552. doi:10.1002/pssa.201532266
  6. J. T. Song, T. Iwasaki, and M. Hatano, "Photoelectrochemical CO2 reduction on 3C-SiC photoanode in aqueous solution" Japanese Journal of Applied Physics, 54.4S (2015.3) 04DR05. doi:10.7567/JJAP.54.04DR05
  7. J. Yaita, T. Iwasaki, M. Natal, S. E. Saddow, and M. Hatano, "Heteroepitaxial Growth of Diamond Films on 3C-SiC/Si Substrates with Utilization of Antenna-Edge Microwave Plasma CVD for Nucleation", Jananese Journal of Applied Physics, 54.4S (2015.3) 04DH13. doi:10.7567/JJAP.54.04DH13
  8. T. Kawamura, H. Uchiyama, S. Saito, H. Wakana, T. Mine, and M. Hatano, "Analysis of subthreshold slope of fully depleted amorphous In-Ga-Zn-O thin-film transistors", Applied Physics Letters, 106 (2015.1) 013504. doi:10.1063/1.4905469
  9. J. Hasegawa, M. Noguchi, M. Furuhashi, S. Nakata, T. Iwasaki, T. Kodera, T. Nishimura, and M. Hatano, "Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy", Japanese Journal of Applied Physics, 54.4S (2015.1) 04DP05. doi:10.7567/JJAP.54.04DP05

2014

  1. T. Miyazaki, Y. Miyamoto, T. Makino, H. Kato, S. Yamasaki, T. Fukui, Y. Doi, N.Tokuda, M. Hatano, and N. Mizuochi, "Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond", Applied Physics Letters, 105 (2014.12) 261601. doi:10.1063/1.4904988
  2. S. Furuyama, K. Tahara, A. Matsutani, T. Iwasaki, and M. Hatano, "Fluorinated graphene FETs controlled by Ionic Liquid Gate", Journal of Display Technology, 10.11 (2014.6) 962-965. doi:10.1109/JDT.2014.2332636
  3. K. Sato, T. Iwasaki, H. Kato, T. Makino, M. Ogura, S. Yamasaki, S. Nakamura, K. Ichikawa, A. Sawabe, and M. Hatano, "Analysis of Selective Growth of n-Type Diamond in Lateral pn Junction Diode", Japanese Journal of Applied Physics, 53.5S1 (2014.4) 05FP01. doi:10.7567/JJAP.53.05FP01.
  4. J. T. Song, T. Iwasaki, and M. Hatano, "Pt co-catalyst effect on photoelectrochemical properties of 3C-SiC photo-anode", Japanese Journal of Applied Physics, 53.5S1 (2014.3) 05FZ04. doi:10.7567/JJAP.53.05FZ04
  5. T. Iwasaki, A. A. Zakharov, T. Eelbo, M. Wasniowska, R. Wiesendanger, J. H. Smet, and U. Starke, "Formation and structural analysis of twisted Bilayer graphene on Ni(111) thin Film", Surface Science, 625 (2014.3) 44-49. doi:10.1016/j.susc.2014.03.004
  6. J. Hasegawa, K. Konishi, Y. Nakamura, K. Otsuka, S. Nakata, Y. Nakamine, T. Nishimura, and M. Hatano, "Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation", Materials Science Forum, 778-780 (2014.2) 828-831. doi:10.4028/www.scientific.net/MSF.778-780.828

2013

  1. T. Iwasaki, J. Yaita, H. Kato, T. Makino, M. Ogura, D. Takeuchi, H. Okushi, S. Yamasaki, and M. Hatano, "600 V Diamond Junction Field-Effect Transistors Operated at 200 °C", IEEE Electron Device Letters, 35.2 (2013.12) 241-243. doi:10.1109/LED.2013.2294969
  2. J. T. Song, H. Mashiko, M. Kamiya, Y. Nakamine, A. Ohtomo, T. Iwasaki, and M. Hatano, "Improved visible light driven photoelectrochemical properties of 3C-SiC semicond with Pt nanoparticles for hydrogen generation", Applied Physics Letters, 103.21 (2013.11) 213901. doi:10.1063/1.4832333
  3. K. Tahara, T. Iwasaki, S. Furuyama, A. Matsutani, and M. Hatano, "Asymmetric transport property of fluorinated graphene", Applied Physics Letters. 103.14 (2013.10) 143106. doi:10.1063/1.4823798
  4. T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, H. Okushi, S. Yamasaki, and M. Hatano, "High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions", IEEE Electron Device Letters, 34.9 (2013.7) 1175-1177. doi:10.1109/LED.2013.2271377
  5. A. Matsutani, K. Tahara, T. Iwasaki, and M. Hatano, "Fluorination of Graphene by Reactive Ion Etching System Using Ar/F2 Plasma", Japanese Journal of Applied Physics. 52.6S (2013.6) 06GD11. doi:10.7567/JJAP.52.06GD11

2012

  1. K. Tahara, T. Iwasaki, A. Matsutani, and M. Hatano, "Effect of radical fluorination on mono- and bi-layer graphene in Ar/F2 plasma", Applied Physics Letters. 101.16 (2012.10) 163105. doi:10.1063/1.4760268
  2. Y. Hoshino, H. Kato, T. Makino, M. Ogura, T. Iwasaki, M. Hatano, and S Yamasaki, "Electrical properties of lateral p-n junction diodes fabricated by selective growth of n+ diamond", Physica Status Solidi (A), 209.9 (2012.8) 1761-1764. doi:10.1002/pssa.201200053
  3. T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, T. Matsumoto, H. Okushi, S. Yamasaki, and M. Hatano, "Diamond Junction Field-Effect Transistors with Selectively Grown n+-Side Gates", Applied Physics Express, 5.9 (2012.8) 091301. doi:10.1143/APEX.5.091301

Proceedings

  1. T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, T. Matsumoto, H. Okushi, S. Yamasaki, and, M. Hatano, (2012.12), "Diamond Semiconductor JFETs by Selectively Grown n+-Diamond Side Gates for Next Generation Power Devices", Proceeding of IEEE International Electron Devices Meeting (IEDM2012), San Francisco, U.S.A. (2012.12) 7.5.1-7.5.4. doi:10.1109/IEDM.2012.6478999